DTD123ECT116 Bipolar Transistor 50V 500mA 200MHz 200mW Surface Mount SST3
Product Details:
Place of Origin: | Original |
Brand Name: | Original |
Certification: | Original |
Model Number: | DTD123ECT116 |
Payment & Shipping Terms:
Minimum Order Quantity: | 1 |
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Price: | negotiation |
Packaging Details: | carton box |
Delivery Time: | 1-3working days |
Payment Terms: | T/T |
Supply Ability: | 100,000 |
Detail Information |
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Transistor Type: | NPN - Pre-Biased | Current - Collector (Ic) (Max): | 500 MA |
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Voltage - Collector Emitter Breakdown (Max): | 50V | Operating Temperature: | -40°C ~ 85°C |
Resistor - Base (R1): | 2.2 KOhms | SMounting Type: | Surface Mount |
High Light: | DTD123ECT116 Bipolar Transistor,Bipolar Transistor 50V 500mA,200mW Surface Mount SST3 |
Product Description
DTD123ECT116 Bipolar Transistor 50 V 500 mA 200 MHz 200 mW Surface Mount SST3
TYPE
|
DESCRIPTION
|
---|---|
Category
|
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Single, Pre-Biased Bipolar Transistors
|
Mfr
|
ROHM
|
Series
|
-
|
Product Status
|
Active
|
Transistor Type
|
NPN - Pre-Biased
|
Current - Collector (Ic) (Max)
|
500 mA
|
Voltage - Collector Emitter Breakdown (Max)
|
50 V
|
Resistor - Base (R1)
|
2.2 kOhms
|
Resistor - Emitter Base (R2)
|
2.2 kOhms
|
DC Current Gain (hFE) (Min) @ Ic, Vce
|
39 @ 50mA, 5V
|
Vce Saturation (Max) @ Ib, Ic
|
300mV @ 2.5mA, 50mA
|
Current - Collector Cutoff (Max)
|
500nA
|
Frequency - Transition
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200 MHz
|
Power - Max
|
200 mW
|
Mounting Type
|
Surface Mount
|
Package / Case
|
TO-236-3, SC-59, SOT-23-3
|
Supplier Device Package
|
SST3
|
Base Product Number
|
DTD123
|
Environmental & Export Classifications
ATTRIBUTE | DESCRIPTION |
---|---|
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.21.0075 |
Features of DTD123ECT116
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external
External input resistors. (see equivalent circuit)
2) The bias resistor consists of a thin-film resistors with complete isolation to allow negative biasing of the input. they also have
the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making device design easy.