• MT41K128M16JT-125 IT:K Memory IC For 2Gbit Parallel 800 MHz 13.75 ns 96-FBGA
MT41K128M16JT-125 IT:K Memory IC For 2Gbit Parallel 800 MHz 13.75 ns 96-FBGA

MT41K128M16JT-125 IT:K Memory IC For 2Gbit Parallel 800 MHz 13.75 ns 96-FBGA

Product Details:

Place of Origin: original
Brand Name: original
Certification: original
Model Number: MT41K128M16JT-125 IT:K

Payment & Shipping Terms:

Minimum Order Quantity: 1
Price: negotiation
Packaging Details: carton box
Delivery Time: 3-5ddays
Payment Terms: T/T
Supply Ability: 1000
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Detail Information

Memory Type: Volatile Memory Format: DRAM
Technology: SDRAM - DDR3L Memory Size: 2Gbit
Memory Organization: 128M X 16 Memory Interface: Parallel
Clock Frequency: 800 MHz Access Time: 13.75 Ns

Product Description

MT41K128M16JT-125 IT:K Memory IC For 2Gbit Parallel 800 MHz 13.75 ns 96-FBGA
 
IC DRAM 2GBIT PARALLEL 96FBGA
 
Specifications of MT41K128M16JT-125 IT:K

 

TYPE DESCRIPTION
Category Integrated Circuits (ICs)
Memory
Mfr Micron Technology Inc.
Series -
Package Bulk
Product Status Active
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR3L
Memory Size 2Gbit
Memory Organization 128M x 16
Memory Interface Parallel
Clock Frequency 800 MHz
Write Cycle Time - Word, Page -
Access Time 13.75 ns
Voltage - Supply 1.283V ~ 1.45V
Operating Temperature -40°C ~ 95°C (TC)
Mounting Type Surface Mount
Package / Case 96-TFBGA
Supplier Device Package 96-FBGA (8x14)
Base Product Number MT41K128M16

 
Features of
MT41K128M16JT-125 IT:K


• VDD = VDDQ = 1.35V (1.283–1.45V)
• Backward-compatible to VDD = VDDQ = 1.5V ±0.075V
• Differential bidirectional data strobe
• 8n-bit prefetch architecture
• Differential clock inputs (CK, CK#)
• 8 internal banks
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Programmable CAS (READ) latency (CL)
• Programmable posted CAS additive latency (AL)
• Programmable CAS (WRITE) latency (CWL)
• Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
• Selectable BC4 or BL8 on-the-fly (OTF)
• Self refresh mode
• TC of 95°C
– 64ms, 8192-cycle refresh up to 85°C
– 32ms, 8192-cycle refresh at >85°C to 95°C
• Self refresh temperature (SRT)

 


Descriptions of MT41K128M16JT-125 IT:K


The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. Refer to the DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode.

 


Environmental & Export Classifications of MT41K128M16JT-125 IT:K

 
ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.32.0036

 

MT41K128M16JT-125 IT:K Memory IC For 2Gbit Parallel 800 MHz 13.75 ns 96-FBGA 0

 

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