IS43DR16640B-25DBLI-TR IC DRAM 1GBIT PARALLEL 84TWBGA
Product Details:
Place of Origin: | original |
Brand Name: | original |
Certification: | original |
Model Number: | Is43dr16640b-25dbli-Tr |
Payment & Shipping Terms:
Minimum Order Quantity: | 1 |
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Price: | negotiation |
Packaging Details: | carton box |
Delivery Time: | 1-3working days |
Payment Terms: | T/T, L/C |
Supply Ability: | 100,000 |
Detail Information |
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Write Cycle Time - Word, Page: | 15ns | Access Time: | 400 Ps |
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Voltage - Supply: | 1.7V ~ 1.9V | Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount | Package / Case: | 84-TFBGA |
Supplier Device Package: | 84-TWBGA (8x12.5) | Base Product Number: | IS43DR16640 |
High Light: | IS43DR16640B-25DBLI-TR IC DRAM,IC DRAM 1GBIT PARALLEL 84TWBGA,DRAM IC 1GBIT PARALLEL 84TWBGA |
Product Description
Is25lp040e-Jnle-Tr Wireless Rf Module Ic Flash 4mbit Spi/Quad 8soic
Is43dr16640b-25dbli-Tr Wireless Rf Module Ic Dram 1gbit Parallel 84twbga
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 84-TWBGA (8x12.5)
Specifications of Is43dr16640b-25dbli-Tr
TYPE | DESCRIPTION |
Category | Integrated Circuits (ICs) |
Memory | |
Memory | |
Mfr | ISSI, Integrated Silicon Solution Inc |
Series | - |
Package | Tape & Reel (TR) |
Product Status | Not For New Designs |
Digi-Key Programmable | Not Verified |
Memory Type | Volatile |
Memory Format | DRAM |
Technology | SDRAM - DDR2 |
Memory Size | 1Gbit |
Memory Organization | 64M x 16 |
Memory Interface | Parallel |
Clock Frequency | 400 MHz |
Write Cycle Time - Word, Page | 15ns |
Access Time | 400 ps |
Voltage - Supply | 1.7V ~ 1.9V |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 84-TFBGA |
Supplier Device Package | 84-TWBGA (8x12.5) |
Base Product Number | IS43DR16640 |
Features of Is43dr16640b-25dbli-Tr
Clock frequency up to 400MHz
8 internal banks for concurrent operation
4-bit prefetch architecture
Programmable CAS Latency: 3, 4, 5, 6 and 7
Programmable Additive Latency: 0, 1, 2, 3, 4,5 and 6
Write Latency = Read Latency-1
Programmable Burst Sequence: Sequential or Interleave
Programmable Burst Length: 4 and 8
Automatic and Controlled Precharge Command
Power Down Mode
Auto Refresh and Self Refresh
Refresh Interval: 7.8 s (8192 cycles/64 ms)
ODT (On-Die Termination)
Weak Strength Data-Output Driver Option
Bidirectional differential Data Strobe (Singleended data-strobe is an optional feature)
On-Chip DLL aligns DQ and DQs transitions with CK transitions
DQS# can be disabled for single-ended data strobe
Read Data Strobe supported (x8 only)
Differential clock inputs CK and CK#
VDD and VDDQ = 1.8V ± 0.1V
PASR (Partial Array Self Refresh)
Applications of Is43dr16640b-25dbli-Tr
SSTL_18 interface
tRAS lockout supported
Operating temperature: Commercial (TA = 0°C to 70°C ; TC = 0°C to 85°C) Industrial (TA = -40°C to 85°C; TC = -40°C to 95°C) Automotive, A1 (TA = -40°C to 85°C; TC = -40°C to 95°C) Automotive, A2 (TA = -40°C to 105°C; TC = -40°C to 105°C)
Environmental & Export Classifications of Is43dr16640b-25dbli-Tr
ATTRIBUTE | DESCRIPTION |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8542.32.0032 |
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