• IS43DR16640B-25DBLI-TR IC DRAM 1GBIT PARALLEL 84TWBGA
IS43DR16640B-25DBLI-TR IC DRAM 1GBIT PARALLEL 84TWBGA

IS43DR16640B-25DBLI-TR IC DRAM 1GBIT PARALLEL 84TWBGA

Product Details:

Place of Origin: original
Brand Name: original
Certification: original
Model Number: Is43dr16640b-25dbli-Tr

Payment & Shipping Terms:

Minimum Order Quantity: 1
Price: negotiation
Packaging Details: carton box
Delivery Time: 1-3working days
Payment Terms: T/T, L/C
Supply Ability: 100,000
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Detail Information

Write Cycle Time - Word, Page: 15ns Access Time: 400 Ps
Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount Package / Case: 84-TFBGA
Supplier Device Package: 84-TWBGA (8x12.5) Base Product Number: IS43DR16640
High Light:

IS43DR16640B-25DBLI-TR IC DRAM

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IC DRAM 1GBIT PARALLEL 84TWBGA

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DRAM IC 1GBIT PARALLEL 84TWBGA

Product Description

Is25lp040e-Jnle-Tr Wireless Rf Module Ic Flash 4mbit Spi/Quad 8soic

Is43dr16640b-25dbli-Tr Wireless Rf Module Ic Dram 1gbit Parallel 84twbga

SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 84-TWBGA (8x12.5)

 

Specifications of  Is43dr16640b-25dbli-Tr

 

TYPE DESCRIPTION
Category Integrated Circuits (ICs)
Memory
Memory
Mfr ISSI, Integrated Silicon Solution Inc
Series -
Package Tape & Reel (TR)
Product Status Not For New Designs
Digi-Key Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR2
Memory Size 1Gbit
Memory Organization 64M x 16
Memory Interface Parallel
Clock Frequency 400 MHz
Write Cycle Time - Word, Page 15ns
Access Time 400 ps
Voltage - Supply 1.7V ~ 1.9V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 84-TFBGA
Supplier Device Package 84-TWBGA (8x12.5)
Base Product Number IS43DR16640

 

Features of Is43dr16640b-25dbli-Tr

 

 Clock frequency up to 400MHz
 8 internal banks for concurrent operation
 4-bit prefetch architecture
 Programmable CAS Latency: 3, 4, 5, 6 and 7
 Programmable Additive Latency: 0, 1, 2, 3, 4,5 and 6
 Write Latency = Read Latency-1
 Programmable Burst Sequence: Sequential or Interleave
 Programmable Burst Length: 4 and 8
 Automatic and Controlled Precharge Command
 Power Down Mode
 Auto Refresh and Self Refresh
 Refresh Interval: 7.8 s (8192 cycles/64 ms)
 ODT (On-Die Termination)
 Weak Strength Data-Output Driver Option
 Bidirectional differential Data Strobe (Singleended data-strobe is an optional feature)
 On-Chip DLL aligns DQ and DQs transitions with CK transitions
 DQS# can be disabled for single-ended data strobe
 Read Data Strobe supported (x8 only)
 Differential clock inputs CK and CK#
 VDD and VDDQ = 1.8V ± 0.1V
 PASR (Partial Array Self Refresh)
 

Applications of Is43dr16640b-25dbli-Tr

 SSTL_18 interface
 tRAS lockout supported
 Operating temperature: Commercial (TA = 0°C to 70°C ; TC = 0°C to 85°C) Industrial (TA = -40°C to 85°C; TC = -40°C to 95°C) Automotive, A1 (TA = -40°C to 85°C; TC = -40°C to 95°C) Automotive, A2 (TA = -40°C to 105°C; TC = -40°C to 105°C)
 

Environmental & Export Classifications of Is43dr16640b-25dbli-Tr

 

ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.32.0032
 

IS43DR16640B-25DBLI-TR IC DRAM 1GBIT PARALLEL 84TWBGA 0

 

 

 

 

 

 

 



 

 

 

 

 

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